MANUFACTURE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE:To enable suppression of connection resistance in a conductive region leading to a plate power source part by suppressing an increase in contact resistance because an impurity diffused layer annexed to an adjacent trench is stably jointed and can take a wide contact area. CONSTITUTION:A PSG 12 is embedded in a trench 6 inside a semiconductor substrate 1, and phosphorus in the PSG 12 is diffused by heat to form an impurity diffused layer 15, thereby jointing it with the impurity diffused layer in an adjacent trench. Then, the PSG 12 is removed, so that a capacitor is formed in the trench 6.