发明名称 Verfahren zum Herstellen einer Halbleiteranordnung vom harzumhüllten Typ.
摘要 An electrically-insulated type semiconductor device to be resin-moulded has a rear surface (BS) which can be set in direct contact with a heat radiation section (200) and a front surface (FS) opposite to the rear surface (BS). This semiconductor device includes a metal lead frame (2-3) having a tip end portion (2*) sandwiched between the resin rear surface (BS) and resin front surface (FS) and a mounting portion (2) on which a semiconductor chip (1) is mounted, and frame supporting holes (8) formed to penetrate from the resin front surface (FS) to the mounting portion (2) of the lead frame (2-3). The frame supporting holes (8) are formed by supporting pins (FP) for positioning the mounting portion (2) of the lead frame (2-3). The frame supporting holes (8) are formed only in the resin front surface (FS), and the lead frame (2-3) is formed in such a shape that a thickness (T2) of resin mould (6*) existing between the resin rear surface (BS) and the tip end portion (2*) of the lead frame (2-3) is set to be larger than a thickness (T1) of resin mould (6*) existing between the resin rear surface (BS) and the mounting portion (2) of the lead frame (2-3).
申请公布号 DE3852124(D1) 申请公布日期 1994.12.22
申请号 DE19883852124 申请日期 1988.09.16
申请人 KABUSHIKI KAISHA TOSHIBA, KAWASAKI, KANAGAWA, JP 发明人 HOSOMI, SADAKI C/O PATENT DIVISION, K. K., MINATO-KU TOKYO 105, JP;UNETSUBO, KENJI C/O PATENT DIVISION, K. K., MINATO-KU TOKYO 105, JP;TATUMI, YOSHIAKI C/O PATENT DIVISION, K. K., MINATO-KU TOKYO 105, JP
分类号 H01L23/28;H01L21/56;H01L23/31;H01L23/495 主分类号 H01L23/28
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