| 摘要 |
PURPOSE:To obtain a semiconductor light emitting device with a long life by providing next to the active layer a semiconductor thin film with a lattice constant intermediate to that of the active layer and the semiconductor substrate thereby reducing the stress on the boundary surface of the strained active layer and preventing the introduction of crystal defects. CONSTITUTION:A GaAlInAs buffer layer with a lattice constant in-between that of the GaInAs well layer 14 and the GaAs barrier layer 15 or the GaAs guide layer 12 is provided in contact with the well layer which has a lattice constant higher than that of the GaAs substrate 1. Because of this construction the stress on the boundary surface of the strain well layer is reduced, thereby preventing the introduction of crystal defects that cause degradation of the light emitting device and thus making it possible to obtain a device with a long life. |
