Halbleiterspeichervorrichtung mit einem sehr schnellen Schreibvorgang,申请号DE19914124421-传众专利搜索

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发明名称	Halbleiterspeichervorrichtung mit einem sehr schnellen Schreibvorgang
摘要
申请公布号	DE4124421(C2)	申请公布日期	1994.12.22
申请号	DE19914124421	申请日期	1991.07.23
申请人	SAMSUNG ELECTRONICS CO., LTD., SUWON, KR	发明人	KIM, MYOUNG-HO, SUWON, KR
分类号	G11C11/409;G11C7/12;G11C11/407;G11C11/4076;G11C11/4094;G11C11/419;(IPC1-7):G11C11/407;G11C7/00	主分类号	G11C11/409
代理机构		代理人
主权项
地址

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