| 摘要 |
PURPOSE:To improve performance of a semiconductor laser element by forming a through groove of a stripe pattern vertical to an edge surface of a substrate, embedding a third clad layer with unidirectional conductivity in the through groove and forming a surface of the third clad layer flat with a surface of a current constricting layer 2. CONSTITUTION:On a substrate l that has a conductivity of either a p type or an n type, a current constricting layer 2 of either the p type or the n type but of the other direction of conductivity is formed and a through groove 2b of the stripe pattern vertical to the edge surface of the substrate 1 is formed on the current constricting layer 2. Therefore, a semiconductor laser element of a refractive ratio guide type can be formed. In the semiconductor laser element, the third clad layer 3 of unidirectional conductivity is embedded in the through groove 2b of the current constricting layer 2, and the surface of it is formed flat with the surface of the current constricting layer 2. Therefore thickness of a first clad layer 3 is formed thin, kink level is improved and performance of an element is improved. |
