Wavelength tunable light emitting device by applying pressure

摘要

A wavelength-tunable light emitting device. A resilient support substrate is provided, and a light emitting diode is formed on an area of the support substrate. The light emitting diode includes a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer formed in their order. Pressure is applied to the active layer by bending the support substrate, thereby changing the energy band gap of the active layer.