发明名称 |
METHOD FOR PREPARING A CuInSe2 COMPOUND |
摘要 |
<p>The method involves electrolytically depositing a precursor of the CuInSe2 compound on an Mo substrate. A sub-layer < 1 mu m thick comprising > 50 At % In, the remainder being at least partly Cu, is deposited first, then a layer containing > 50 At % Cu is deposited to bring the In/Cu ratio of the entire layer substantially to 1/1. An amount of solid and/or gaseous Si corresponding to at least 100 At % of the overall In/Cu layer is brought into contact with said layer and the compound is formed by means of a heat reaction at Se vapour pressure in a neutral atmosphere.</p> |
申请公布号 |
WO9429904(A1) |
申请公布日期 |
1994.12.22 |
申请号 |
WO1994IB00147 |
申请日期 |
1994.06.07 |
申请人 |
BATTELLE MEMORIAL INSTITUTE;GREMION, FRANCOIS;ISSARTEL, JEAN-PAUL;MUELLER, KLAUS |
发明人 |
GREMION, FRANCOIS;ISSARTEL, JEAN-PAUL;MUELLER, KLAUS |
分类号 |
H01L21/288;C25D5/10;H01L21/368;H01L31/032;H01L31/04;(IPC1-7):H01L31/032;H01L31/18 |
主分类号 |
H01L21/288 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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