发明名称 SEMICONDUCTOR MEMORY
摘要 PURPOSE:To allow accurate read out of data from a memory cell even if the layout area of a DRAM is decreased or the memory capacity thereof is increased. CONSTITUTION:A plurality of pairs of sub-bit line BLs and /BLs are arranged for a pair of relatively long main bit lines BLm and /BLm. The sub-bit line BLs or /BLs is connected with the main bit line BLm or /BLm through a transfer gate T or /T. The parasitic capacitance of the pair of main bit lines BLm and /BLm per unit length is set one fourth or less that of the pair of sub-bit line.
申请公布号 JPH06349267(A) 申请公布日期 1994.12.22
申请号 JP19940073329 申请日期 1994.04.12
申请人 MITSUBISHI ELECTRIC CORP 发明人 ASAKURA MIKIO;TSUKIDE MASAKI;FUJISHIMA KAZUYASU
分类号 G11C11/401;H01L21/8242;H01L27/10;H01L27/108 主分类号 G11C11/401
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