| 摘要 |
A capacitor bank includes a first node, a second node, first blocking capacitors, N first AMOS varactors, second blocking capacitors and N second AMOS varactors. The first blocking capacitors have first terminals connected to the first node and second terminals where a bias voltage is applied. The N first AMOS varactors have first terminals connected to the second terminals of the first block capacitors. The second blocking capacitors have first terminals connected to the second node and second terminals where the bias voltage is applied. The N second AMOS varactors have first terminals connected to the second terminals of the second blocking capacitors and second terminals connected to second terminals of the first AMOS varactors, respectively, wherein N binary coded signals are applied to the respective second terminals of the first AMOS varactors and the second AMOS varactors. Therefore, phase-noise degradation caused by the FM modulation may be avoided. |
