| 摘要 |
An etching solution comprises organic acid and hydrogen peroxide mixed in a volume ratio of 1:1 to 200:1 with basic material added thereto to an amount that adjust the pH. The etching solution presents an eminent difference in the etching rate between GaAs/AlGaAs, GaAs/InGaAs, AlGaAs/InGaAs, InGaAs/AlGaAs, and InGaAs/GaAs, and a high selectivity etching is enabled easily and at high preciseness. Therefore, a precise control of an etching for a heterostructure semiconductor is enabled. <IMAGE> |
