发明名称 Wafer containing semiconductor laser devices and method of cleaving said wafer.
摘要 A semiconductor laser device element substrate (fig. 1) includes a plurality of semiconductor laser device elements arranged in an array on a semiconductor substrate, the array comprising a plurality of rows and a plurality of columns, laser resonator facets being located at the boundaries between the respective rows of the semiconductor laser device elements, and element separation guiding grooves (5), for guiding separation into a plurality of divided semiconductor laser devices from the wafer state, being located at the boundaries between the semiconductor laser device elements of the respective columns, wherein the element separation guiding grooves are arranged at positions on different lines running in the column direction for each row or for each two or more rows. Therefore, even if some forces are applied to the substrate, the forces are not concentrated on a point, thereby wafer cracking can be prevented. <IMAGE>
申请公布号 EP0617490(A3) 申请公布日期 1994.12.21
申请号 EP19930117274 申请日期 1993.10.25
申请人 MITSUBISHI ELECTRIC CORP 发明人 TADA HITOSHI C O MITSUBISHI DE
分类号 H01L21/301;H01S5/00;H01S5/02 主分类号 H01L21/301
代理机构 代理人
主权项
地址