| 摘要 |
<p>A method of fabricating an MIS type semiconductor device which has a semiconductor substrate (1), a source region (4) and a drain region (5) formed under a surface of the semiconductor substrate (1). Further, in the semiconductor device, a plurality of gate insulation films (12) are formed on the surface of the semiconductor substrate (1). Then a plurality of gate electrodes (3) are formed on the plurality of gate insulation films (12) in such a manner to be arranged in series with one another between the source and drain regions (4, 5). Moreover, a source diffusion layer (17), a drain diffusion layer (18) and inter-gate-electrode diffusion layers (19) are formed under the surfaces of regions of the semiconductor substrate (1) after a conductive layer (23) for covering at least one of the inter-gate-electrode diffusion layers (19) among the plurality of gate electrodes (3) has been deposited on an entire surface of the device. <IMAGE></p> |
