| 摘要 |
<p>In a semiconductor light emitting device of a group II-V semiconductor, a current shutting-off layer (6, 16) for passing the current only through a belt-shaped central area (6a) is formed in one of the two light shutting-up layers (5, 7, 15, 17) sandwiching an active layer (4, 14), so that the light emission efficiency improves and a light guiding path is provided. In a process for forming each layer on a substrate through epitaxial growth, the belt-shaped central area (6a) is formed by etching the current shutting-off layer (6, 16). <IMAGE></p> |
