| 摘要 |
There is described an integrated structure bipolar switching transistor comprising an antisaturation circuit which consists of a first semiconductor region (P1) of a second conductivity type, extending from a top surface into a semiconductor material (2) of a first conductivity type, within which a second semiconductor region (7) of a first conductivity type, also extending from said top surface, is provided, said first and second semiconductor regions (P1,7) having respective doping profiles suitable to define a zero-gain bipolar transistor whose base and emitter are respectively represented by said first and second semicondutor regions (P1,7), and whose collector is represented by said semiconductor material (2) which also constitutes the collector of the bipolar switching transistor (T); the first and second semiconductor regions (P1,7) are respectively connected to an external base terminal (B2,B) and to a base region (P2) of the bipolar switching transistor (T), so that a first junction diode (D1), represented by the base-collector junction of the zero-gain transistor (T), is connected between said external base terminal (B2,B) and the collector (2) of the bipolar switching transistor (T), while a second junction diode (D2), represented by the emitter-base junction of the zero-gain transistor, is serially connected between the base region (P2) of the bipolar switching transistor (T) and the external base terminal (B2,B). <IMAGE> |
