Forming a prescribed pattern on a semiconducor device layer.

摘要

A method for forming a prescribed pattern on a layer of a semiconductor device, comprising the steps of: preparing a substrate (40) having a first main surface; forming a first layer (41) on the first main surface; forming a second layer (42) on the first layer; forming a third layer (43) on the second layer; selectively removing the third layer to form a first patterned layer; immersing the substrate having the first patterned layer into a predetermined solution to form a fourth layer (45) selectively over the portions of the second layer uncovered by the first patterned layer; removing the first patterned layer; and etching the second layer using the fourth layer (45) as a mask, characterised in that the first layer (41) is an insulating layer, the second layer (42) is a metal layer, third layer (43) is a photoresist layer, and the fourth layer is a Si02 layer, whereby the remainder of the second layer (42) constitutes a metal interconnect layer for the semiconductor device. <IMAGE> <IMAGE>