| 摘要 |
<p>The method for recrystallizating a amorphous silicon of thin film formed on a substrate comprises preheating the amorphous silicon by a second optical source, melting the preheated amorphous silicon using a first optical source and recrystallizing the melted amorphous silicon by heating with the first source. The obtained polisilicon is used for manufacturing a semiconductor device and a liquid crystal display device with good operation performance and reliability.</p> |
