| 摘要 |
A semiconductor DRAM comprises: a stacked capacitor (41) comprising a storage node electrode (42) a capacitor dielectric film (44) and a plate electrode (43), and formed in a memory cell area of a semiconductor substrate (11); and bit lines (18). A plate electrode forming film (53) having a portion extending over the entire memory cell area (21) or at least over an area including the plate electrode (43) and bit contact forming portions (24) in the memory cell area (21), and contact forming portions (34) in the peripheral circuit area (31) is formed, a second layer insulating film (15) is formed over the plate electrode forming film (53), bit contact holes (25) and contact holes (36) are formed respectively in the bit contact forming portions (24) and the contact forming portions (31) through the plate electrode forming film (53), the side surfaces of the bit contact holes (25) and the contact holes (36) are coated respectively with insulating films (26, 37), conductive plugs (16, 17) are formed in the bit contact holes (25) and the contact holes (36), and bit lines (18) are formed on the second layer insulating film (15) so as to be connected to the conductive plugs (16, 17).
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