发明名称 Nanowire device and method of fabricating the same
摘要 A nanowire device having a structure allowing for formation of p-type and n-type doped portions in a nanowire, and a method of fabricating the same. The nanowire device includes a substrate, a first electrode layer formed on the substrate, a second electrode layer facing the first electrode layer, a plurality of nanowires interposed at a predetermined interval between the first electrode layer and the second electrode layer to connect the same, and an electrolyte containing an electrolytic salt filling spaces between the nanowires.
申请公布号 US7358524(B2) 申请公布日期 2008.04.15
申请号 US20060406255 申请日期 2006.04.19
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE HYO-SUG;LEE SUNG-HOON;JIN YOUNG-GU;KIM JONG-SEOB;PARK SUNG-IL
分类号 H01L29/06;H01L31/0328;H01L31/0336;H01L31/072;H01L31/109;H01L33/08;H01L33/20;H01L35/24;H01L51/00 主分类号 H01L29/06
代理机构 代理人
主权项
地址