发明名称 |
Nanowire device and method of fabricating the same |
摘要 |
A nanowire device having a structure allowing for formation of p-type and n-type doped portions in a nanowire, and a method of fabricating the same. The nanowire device includes a substrate, a first electrode layer formed on the substrate, a second electrode layer facing the first electrode layer, a plurality of nanowires interposed at a predetermined interval between the first electrode layer and the second electrode layer to connect the same, and an electrolyte containing an electrolytic salt filling spaces between the nanowires.
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申请公布号 |
US7358524(B2) |
申请公布日期 |
2008.04.15 |
申请号 |
US20060406255 |
申请日期 |
2006.04.19 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE HYO-SUG;LEE SUNG-HOON;JIN YOUNG-GU;KIM JONG-SEOB;PARK SUNG-IL |
分类号 |
H01L29/06;H01L31/0328;H01L31/0336;H01L31/072;H01L31/109;H01L33/08;H01L33/20;H01L35/24;H01L51/00 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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