发明名称 |
Method for forming an aluminum metal contact |
摘要 |
A method is provided for depositing aluminum thin film layers so as to form an improved metal contact in a semiconductor integrated circuit device. An initial layer of aluminum is deposited at a very low temperature, such as room temperature, to a depth sufficient to form a continuous layer. A second aluminum layer is then deposited at increasing temperatures and lower deposition rates in order to complete the deposition of the layer.
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申请公布号 |
US5374592(A) |
申请公布日期 |
1994.12.20 |
申请号 |
US19940192786 |
申请日期 |
1994.02.07 |
申请人 |
SGS-THOMSON MICROELECTRONICS, INC. |
发明人 |
MACNAUGHTON, ROBERT B.;LIAO, DE-DUI |
分类号 |
H01L21/28;H01L21/285;H01L21/3205;H01L21/768;H01L23/485;H01L23/52;H01L23/522;H01L23/532;(IPC1-7):H01L21/44 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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