发明名称 Method of forming patterned polyimide films
摘要 A method of producing patterned polyimide films using wet development of polyimide precursors through a photoresist mask is disclosed. Low thermal coefficient of expansion (TCE) polyimide patterns are formed by starting with a polyamic acid precursor, typically, that derived from 3,3',4,4'-biphenyltetracarboxylic acid dianhydride-p-phenylenediamine (BPDA-PDA). Polyimide patterns are generated with complete retention of the intrinsic properties of the polyimide backbone chemistry and formation of metallurgical patterns in low TCE polyimide dielectric.
申请公布号 US5374503(A) 申请公布日期 1994.12.20
申请号 US19930047642 申请日期 1993.04.13
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 SACHDEV, KRISHNA G.;WHITAKER, JOEL R.;AHMAD, UMAR M.
分类号 H01L21/30;G03F7/00;G03F7/09;H01L21/306;H01L21/311;H01L21/312;H01L21/768;(IPC1-7):G03C5/00 主分类号 H01L21/30
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