发明名称 |
Method of forming patterned polyimide films |
摘要 |
A method of producing patterned polyimide films using wet development of polyimide precursors through a photoresist mask is disclosed. Low thermal coefficient of expansion (TCE) polyimide patterns are formed by starting with a polyamic acid precursor, typically, that derived from 3,3',4,4'-biphenyltetracarboxylic acid dianhydride-p-phenylenediamine (BPDA-PDA). Polyimide patterns are generated with complete retention of the intrinsic properties of the polyimide backbone chemistry and formation of metallurgical patterns in low TCE polyimide dielectric.
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申请公布号 |
US5374503(A) |
申请公布日期 |
1994.12.20 |
申请号 |
US19930047642 |
申请日期 |
1993.04.13 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
SACHDEV, KRISHNA G.;WHITAKER, JOEL R.;AHMAD, UMAR M. |
分类号 |
H01L21/30;G03F7/00;G03F7/09;H01L21/306;H01L21/311;H01L21/312;H01L21/768;(IPC1-7):G03C5/00 |
主分类号 |
H01L21/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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