发明名称 PRODUCTION OF SINGLE CRYSTAL
摘要 PURPOSE:To provide a method for producing a high quality single crystal by the Bridgman method by which the occurrence of crystal defects such as bubbles, cell growth and striae can be prevented. CONSTITUTION:When a single crystal is grown by the Bridgman method while transferring a crucible contg. a melt and a crystal to be grown from a high temp. part to a low temp. part, the rate of transfer of the crucible is varied from the beginning of crystal growth to the end so that the rate of growth of the crystal in the crucible is made always constant.
申请公布号 JPH06345580(A) 申请公布日期 1994.12.20
申请号 JP19930135532 申请日期 1993.06.07
申请人 SHIN ETSU CHEM CO LTD 发明人 MAKIKAWA SHINJI;KUWABARA YOSHINORI;RIYUUOU TOSHIHIKO
分类号 C30B11/00;C30B29/32;G01T1/202;(IPC1-7):C30B11/00 主分类号 C30B11/00
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