| 摘要 |
A ferromagnetic delta -Mn1-xGax thin film having perpendicular anisotropy is described which comprises: (a) a GaAs substrate, (b) a layer of undoped GaAs overlying said substrate and bonded thereto having a thickness ranging from about 50 to about 100 nanometers, (c) a layer of delta -Mn1-xGax overlying said layer of undoped GaAs and bonded thereto having a thickness ranging from about 20 to about 30 nanometers, and (d) a layer of GaAs overlying said layer of delta -Mn1-xGax and bonded thereto having a thickness ranging from about 2 to about 5 nanometers, wherein x is 0.4 +/-0.05.
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