发明名称 |
Method for preparing semiconductor member |
摘要 |
A method for preparing a semiconductor member comprising steps of: making a silicon substrate porous; forming a non-porous silicon monocrystalline layer on the porous silicon substrate at a first temperature; bonding a surface of the non-porous silicon monocrystalline layer on to another substrate having an insulating material on the surface thereof; etching the porous silicon by removing the porous silicon of the bonded substrate by chemical etching; and forming a monocrystalline silicon layer on the non-porous silicon monocrystalline layer by epitaxial growth at a second temperature higher than the first temperature.
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申请公布号 |
US5374581(A) |
申请公布日期 |
1994.12.20 |
申请号 |
US19930127113 |
申请日期 |
1993.09.27 |
申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
ICHIKAWA, TAKESHI;YONEHARA, TAKAO;SAKAGUCHI, KIYOFUMI |
分类号 |
H01L21/20;H01L21/306;H01L21/762;H01L31/18;(IPC1-7):H01L21/302 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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