发明名称 |
Method of forming a transistor having an offset channel section |
摘要 |
The present invention includes a transistor having a channel region with a first and second section, wherein the sections have lengths that generally perpendicular to one another. The prevent invention also includes the transistor in an SRAM cell and processes for forming the transistor and the SRAM cell. In the embodiments that are described, the first section has a length that is generally vertical and the second section has a length that is generally extends in a lateral direction. The first section may be an undoped or lightly doped portion of a silicon plug. The plug may be formed including an etching or polishing step.
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申请公布号 |
US5374572(A) |
申请公布日期 |
1994.12.20 |
申请号 |
US19930095502 |
申请日期 |
1993.07.22 |
申请人 |
MOTOROLA, INC. |
发明人 |
ROTH, SCOTT S.;MCFADDEN, WILLIAM C.;PEPE, ALEXANDER J. |
分类号 |
H01L21/8244;H01L27/11;H01L29/45;H01L29/786;(IPC1-7):H01L21/265 |
主分类号 |
H01L21/8244 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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