| 发明名称 |
Method for forming a base link in a bipolar transistor |
| 摘要 |
A method for forming an improved base link for a bipolar transistor is provided. The wall where the base link (44) is formed is substantially vertical (32,34). An oxide mask (24) is use during etching of the polysilicon layer (18) that provides the wall, instead of a conventional photoresist mask. The preferred method is compatible with manufacturing BiCMOS devices.
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| 申请公布号 |
US5374568(A) |
申请公布日期 |
1994.12.20 |
| 申请号 |
US19930125986 |
申请日期 |
1993.09.23 |
| 申请人 |
MOTOROLA, INC. |
发明人 |
HUANG, WEN-LING M.;RAMASWAMI, SHRINATH;GRIMALDI, MAUREEN F. |
| 分类号 |
H01L21/331;H01L21/8249;H01L29/10;H01L29/73;(IPC1-7):H01L21/265 |
主分类号 |
H01L21/331 |
| 代理机构 |
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| 主权项 |
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