| 摘要 |
Semiconductor wafers are vertically loaded into a cassette, the cassette is placed on a support structure, the cassette and support structure are placed in a drop-in tank, and the drop-in tank is placed inside a larger tank containing etching solution. Holes in the drop-in tank allow the etching solution in the larger tank to enter and fill the drop-in tank. A pump sucks etching solution out of the larger tank and as a result, also sucks etching solution out of the drop-in tank through the holes. The pumped out solution is then filtered of residue waste resulting from the etching process, and the filtered solution is pumped into a hollow portion of the support structure and from thence, out of the hollow portion through holes formed on a top surface of the support structure, generating thereby, currents of filtered etching solution. The currents of etching solution then flow into an open bottom of the cassette, flow past the vertically hanging semiconductor wafers, and flow out of an open top of the cassette, carrying along with them, the residue waste resulting from the etching process. The residue waste then sinks to the bottom of the drop-in tank and is subsequently sucked out by the pump, along with the etching solution, through the holes in the drop-in tank. The pumped out solution is then filtered and recirculated back into the drop-in tank through the support structure as previously described.
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