Method for measuring peak carrier concentration in ultra-shallow junctions

摘要

A method is disclosed for determining peak carrier concentration in ultra shallow junctions of semiconductor samples. A region of the surface of the sample is periodically excited. The effects of the excitation are monitored by a probe beam. Synchronous detection produces in-phase (I) and quadrature (Q) signals. These signals are compared to signals obtained from calibration samples to evaluate peak carrier concentration.