Verfahren zur Herstellung von abwechselnden Schichten aus monokristallinen Halbleitermaterial und Schichten aus isolierendem Material.

摘要

Method for producing a layer of a monocrystalline semiconductor material on a layer of an insulating material (20). To do this, an epitaxial growth is effected in a cavity (30) closed by layers of dielectric material (20, 40), starting from a seed (38) of monocrystalline semiconductor material (38) of a substrate. Growth first occurs vertically, perpendicularly to the seed (38), and then horizontally in the plane of the cavity (30). …This method thus permits three-dimensional integration of semiconductor components. ……