METHOD FOR MEASURING ROTATION ANGLE OF BONDED WAFER

摘要

A bonded wafer (10) is manufactured by bonding a base wafer (1), which has notches (1N, 2N) on the outer periphery for indicating crystal orientation, and a bonding wafer (2) at a desired rotation angle by using the notches, and by thinning the bonding wafer (2). In a method for measuring the rotation angle of the bonded wafer, the outline (2R) of the thinned bonding wafer is observed, the positional direction of the notch (2N) of the bonding wafer viewed from the center (C) of the bonded wafer is calculated by using the outline (2R), an angle formed by the positional direction of the notch (2N) of the calculated bonding wafer and the positional direction (1N) of the notch of the base wafer is calculated, and the rotating angle of the base wafer (1) and the bonding wafer (2) is measured. Thus, the rotation angle of the notches of the base wafer and the bonding wafer can be accurately and simply measured on the bonded wafer manufacturing line.