发明名称 THIN FILM GAS SENSOR AND METHOD OF FABRICATION THEREOF
摘要 <p>An integrated monolithic gas sensor comprises a substrate and thin films deposited on this substrate. The thin films include a thin film electrically conductive heating element, a thin film conductive reference electrode, and a second thin film conductive electrode, these electrodes and heating element being electrically isolated from each other. A thin film ionic conductor and a thin film reactive gas sensitive layer are placed between the reference electrode and the second conductive electrode to form an electrolytic cell in which an electrolytic reaction including as reagent the gas to be detected produces between the two conductive electrodes an electromotive force indicative of the concentration of the gas. Also deposited is a micro-thermometer formed of a thin film wire having a temperature-dependent resistance. When the gas to be detected is CO2, the ionic conductor may comprise NASICON of formula Na3Zr2Si2PO12, and the reactive gas sensitive layer may comprise Na2CO3.</p>
申请公布号 WO1994028403(A1) 申请公布日期 1994.12.08
申请号 CA1994000312 申请日期 1994.06.01
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