SEMICONDUCTOR DEVICE HAVING HIGH BREAKDOWN STRENGTH

摘要

A semiconductor device is designed in such a manner the distance from the bottom of a mesa groove to the pn junction on the lower side is greater than the extension of the depletion layer from the pn junction on the lower side when a voltage which is substantially equal to the target breakdown strength is applied. Then the part other than the corners of the mesa groove, that is, the width of the groove on the straight line part, is substantially equal to the distance from the bottom of the mesa groove to the pn junction on the lower side.