| 摘要 |
A circuit which protects against damage to an integrated circuit caused by electrostatic discharge (ESD) includes a resistor (24) connected at one end to an input pad (20), and a pair of back-to-back Schottky diodes (DS1, DS2) connected to the other end (22) of the resistor (20). The cathodes of the Schottky diodes (DS1, DS2) are connected to each other by a common semiconductor substrate and connected to a supply voltage (28). The anode of one of the Schottky diodes (DS2) is grounded, and the anode of the other Schottky diode (DS1) is connected to a node (22) in common with the other end of the resistor (24) and a circuit component to be protected from an ESD spike. The Schottky diodes, when forward biased by an ESD spike, do not inject minority carriers into the substrate. In this way, unwanted PNP, NPN, or four-layer diode problems are avoided and recovery from an ESD spike is rapid.
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