| 摘要 |
<p>This invention is directed to provide an insulating oxide film having a high dielectric strength, a small leakage current and a large charge injection capacity, and to provide a semiconductor device having such an insulating oxide film. The formation method of an insulating oxide film according to the present invention is characterized in that a semiconductor is heated in a weak oxidizing atmosphere consisting of inert gas, moisture and active species of hydrogen or in a weak oxidizing atmosphere consisting of inert gas, moisture active species of hydrogen, and hydrogen, so that an insulating oxide film is formed on the surface of the substrate. The semiconductor device according to the present invention is characterized in that it has an insulating film formed by the method described above.</p> |
