发明名称 |
Manufacturing method of a channel in MOS semiconductor devices. |
摘要 |
<p>Formed on the element region (13) of an n-type semiconductor substrate (12) is a silicon oxide layer (14), on which a polysilicon layer (15) is formed. Boron ions, p-type impurities, are then implanted into the polysilicon layer (15), from which boron diffuses into the element region (13) via the silicon oxide layer (14), with the result that a p-channel region of the p-channel MOS transistor is formed. <IMAGE> <IMAGE></p> |
申请公布号 |
EP0459398(B1) |
申请公布日期 |
1994.12.07 |
申请号 |
EP19910108692 |
申请日期 |
1991.05.28 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
TOYOSHIMA, YOSHIAKI, C/O INTELLECTUAL PROPERTY DIV;EGUCHI, TAMAO, C/O INTELLECTUAL PROPERTY DIV. |
分类号 |
H01L21/225;H01L21/336;H01L29/10;H01L29/78;(IPC1-7):H01L29/784 |
主分类号 |
H01L21/225 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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