发明名称 |
Semiconductor device and manufacturing method thereof. |
摘要 |
A semiconductor device 1000 comprises an electrically insulating film 10 having a device hole 12; lead groups 30A to 30D, each consisting of a large number of leads 30 arranged in a predetermined pattern, in a plurality of lead formation regions 100 to 400 on the surface of the film 10; an integrated circuit chip 20 positioned within the device hole 12 and with electrodes 22 connected to inner lead portions of the leads 30; and a resin sealing portion 50 that seals in at least the integrated circuit chip 20, the film 10, and the lead groups 30A to 30D. The film 10 comprises a first group of aperture portions 14 consisting of aperture portions 14a to 14d provided in regions 500 to 800 outside the lead formation regions and a second group of aperture portions 16 consisting of a plurality of aperture portions 16a to 16e provided in the lead formation regions 100 to 400. <IMAGE> <IMAGE> |
申请公布号 |
EP0627766(A1) |
申请公布日期 |
1994.12.07 |
申请号 |
EP19940108542 |
申请日期 |
1994.06.03 |
申请人 |
SEIKO EPSON CORPORATION |
发明人 |
YAMASAKI, YASUO, C/O SEIKO EPSON CORPORATION;HAMA, NORIKATA, C/O SEIKO EPSON CORPORATION;KURASAWA, MUNENORI, C/O SEIKO EPSON CORPORATION;HASHIMOTO, NOBUAKI, C/O SEIKO EPSON CORPORATION |
分类号 |
H01L21/56;H01L21/60;H01L23/28;H01L23/31;H01L23/433;H01L23/495;H01L23/50 |
主分类号 |
H01L21/56 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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