An AlGaInP light emitting device.

摘要

An AlGaInP double heterojunction structure or an AlGaInP single heterojunction structure is formed on a first conductivity-type GaAs substrate (11), and then a layer made of a second conductivity-type AlWGa1-WAs1-VPV mixed crystal (Al0.7Ga0.3As0.97P0.03, for example) which has the bandgap energy larger than the energy of photon emitted from the active layer (13) of said light emitting layer portion (18), and has good lattice-matching with (AlBGa1-B)0.51In0.49P mixed crystal (layer) constituting said light emitting layer portion (18), is formed as a current spreading layer (31) on top of said light emitting layer portion (18). Here, w and v are in the range of 0.45 </= w < 1 and 0 < v </= 0.08, respectively. <IMAGE>