| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid-state imaging apparatus capable of reducing the generation of a dark current and a method for manufacturing the solid-state imaging apparatus.SOLUTION: According to one embodiment of the present invention, the solid-state imaging apparatus is provided. The solid-state imaging apparatus includes a semiconductor layer, the gate of a pixel transistor, the gate of a peripheral circuit transistor, a silicon nitride film, and a side wall. A photodiode and a floating diffusion are provided on the semiconductor layer. The gate of the pixel transistor is provided on the surface of the semiconductor layer through a gate oxide film. The gate of the peripheral circuit transistor is provided on the surface of the semiconductor layer through the gate oxide film. The silicon nitride film is provided on the upper surface of the photodiode in the semiconductor layer through the gate oxide film. The side wall is provided on at least one side surface except the side surface on the photodiode side of the gate of the pixel transistor.SELECTED DRAWING: Figure 4 |
