发明名称 FORMATION METHOD OF RESIST PATTERN
摘要 PURPOSE:To provide a working technique which enhances the limiting resolution of a resist pattern and which can comply with the fineness of an element. CONSTITUTION:A substrate 1 is coated with a negative resist 2A provided with properties by which an acid radical is generated in an exposed part and by which the exposed part is made hard to dissolve when a heat treatment is executed. The negative resist 2A is exposed, heat-treated and developed, and a fine pattern is formed in the negative resist 2A. The negative resist 2A is coated with a negative resist 2B provided with the same property as the negative resist 2A. A heat treatment is executed, the acid radical in the negative resist 2A is diffused into the negative resist 2B, and the negative resist 2B near the negative resist 2A is made hard to dissolve. The negative resist 2B which has not been made hard to dissolve is removed, and a fine pattern having an opening size which is smaller than the opening size of the negative resist 2A is obtained.
申请公布号 JPH06338452(A) 申请公布日期 1994.12.06
申请号 JP19930127240 申请日期 1993.05.28
申请人 TOSHIBA CORP 发明人 HAYASHI KENJI
分类号 G03F7/26;H01L21/027;(IPC1-7):H01L21/027 主分类号 G03F7/26
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