发明名称 |
Gate circuit, semiconductor integrated circuit device and method of fabrication thereof, semiconductor memory and microprocessor |
摘要 |
A novel gate circuit is disclosed. A first semiconductor switch includes a couple of main terminals connected between a first potential level and an output node, in which a high impedance state is held in response to an input signal having a first logic level and a second logic level, and the impedance state changes from high to low only during a transient period when the input signal changes substantially from the first to second logic level. A second semiconductor switch includes a couple of main terminals inserted between a second potential level different from the first potential level and the output node, in which a high impedance state is held in response to the input signal, and the impedance state changes from high to low only during a transient period when the input signal changes from the second to first logic level.
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申请公布号 |
US5371023(A) |
申请公布日期 |
1994.12.06 |
申请号 |
US19920895815 |
申请日期 |
1992.06.09 |
申请人 |
HITACHI, LTD. |
发明人 |
MINAMI, MASATAKA;HIRAKI, MITSURU;YANO, KAZUO;WATANABE, ATSUO;SEKI, KOUICHI;NAGANO, TAKAHIRO;SATO, KAZUSHIGE;YOSHIZUMI, KEIICHI;IZAWA, RYUICHI |
分类号 |
H01L27/06;H01L27/105;(IPC1-7):H01L21/20 |
主分类号 |
H01L27/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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