Semiconductor slapper

摘要

An RF-insensitive semiconductor slapper ignitor is created using a silicon substrate having a first metallized portion centrally located on its bottom face to form a Schottky barrier diode thereon, and a second substantially smaller metallized portion centrally located on its top face to form a consumable plug. A flyer disc is disposed atop the second metallized portion and is propelled when the consumable plug vaporizes in response to the high current density associated with ignition. In various embodiments the flyer disc is either an insulating material such as plastic, or polyimide, or formed integral to a top contact metal layer.