发明名称 |
Heterojunction bipolar transistor with base layer having graded bandgap |
摘要 |
A base layer interposed between an n-type GaAs collector layer and an n-type AlGaAs emitter layer is composed of a p-type InAlGaAs. From a collector/base interface to an emitter/base interface, an InAs composition of the base layer is decreased and a concentration of carbon as a p-type impurity thereof is increased so as to obtain a built-in internal field intensity in the base layer by a cooperative effect of the graded-bandgap and the impurity concentration gradient, thus reducing a base transit time of electrons. The base layer is fabricated according to MOMBE using TMG as a gallium source, controlling the InAs composition, so that a desired carbon concentration gradient is automatically formed. Thereby, a high performance heterojunction bipolar transistor with an increased built-in internal field intensity in the base layer is obtained.
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申请公布号 |
US5371389(A) |
申请公布日期 |
1994.12.06 |
申请号 |
US19930101685 |
申请日期 |
1993.08.04 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
MATSUNO, TOSHINOBU;NAKAGAWA, ATSUSHI;HIROSE, TAKASHI;INOUE, KAORU |
分类号 |
H01L29/205;H01L21/331;H01L29/10;H01L29/73;H01L29/737;(IPC1-7):H01L29/161;H01L29/225 |
主分类号 |
H01L29/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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