Buried fin contact structures on FinFET semiconductor devices

摘要

A method includes forming a raised isolation structure with a recess above a substrate, forming a gate structure above the fin, forming a plurality of spaced-apart buried fin contact structures within the recess that have an outer perimeter surface that contacts at least a portion of an interior perimeter surface of the recess and forming at least one source/drain contact structure for each of the buried fin contact structures. One device includes a plurality of spaced-apart buried fin contact structures positioned within a recess in a raised isolation structure on opposite sides of a gate structure. The upper surface of each of the buried fin contact structures is positioned below an upper surface of the raised isolation structure and an outer perimeter surface of each of the buried fin contact structures contacts at least a portion of an interior perimeter surface of the recess.

主权项

1. A device, comprising:
at least one fin defined in a semiconductor substrate; a raised isolation structure with a recess formed therein, wherein said raised isolation structure has an upper surface, a bottom surface that is positioned below said upper surface and an interior perimeter surface; a gate structure positioned around at least a portion of said at least one fin, wherein said upper surface of said raised isolation structure is positioned at a height below an upper surface of said gate structure; a plurality of spaced-apart buried fin contact structures positioned within said recess and covering an entirety of said bottom surface, wherein each of said buried fin contact structures is positioned on opposite sides of said gate structure and wherein each of said buried fin contact structures contacts at least a portion of a sidewall of said at least one fin and a top surface of said at least one fin and has an upper surface that is positioned level with or below said upper surface of said raised isolation structure and above said top surface of said at least one fin; at least one layer of insulating material positioned above said plurality of buried fin contact structures and said raised isolation structure; and a plurality of source/drain contact structures positioned in said at least one layer of insulating material, wherein each of said source/drain contact structures is conductively coupled to one of said plurality of buried fin contact structures.