Semiconductor devices with enhanced electromigration performance

摘要

Semiconductor devices with enhanced electromigration performance and methods of manufacture are disclosed. The method includes forming at least one metal line in electrical contact with a device. The method further includes forming at least one staple structure in electrical contact with the at least one metal line. The at least one staple structure is formed such that electrical current passing through the at least one metal line also passes through the at least staple structure to reduce electromigration issues.

主权项

1. A structure comprising:
a last metal line in electrical contact with an underlying device; and at least one staple structure in direct electrical contact with the last metal line, the at least one staple structure reducing electromigration issues in the last metal line, wherein the at least one staple structure is formed in a dielectric material, a plurality of vias and a trench spanning between the plurality of vias, and the plurality of vias and the trench are lined with a conductive liner and the plurality of vias and the trench are filled with a conductive material to form a conductive bar in direct electrical contact with the conductive liner in the vias.