| 摘要 |
PURPOSE:To reduce a lattice defect, which is introduced in a single crystal thin film at the initial stage of the growth of the thin film, and to form the single crystal thin film having a flat-interface by a method wherein the orientation of a semiconductor single crystal substrate is set as a face slanted at a specified angle from the face (100) and more than one layer of II-VI compound semiconductor single crystal thin film layers are formed on the substrate. CONSTITUTION:The interior of an ultrahigh vacuum container 1 is evacuated by an ion pump 2, 8 sheets of GaAs (100) oriented substrate turned off by the amount corresponding to the inclination of the face are arranged at the positions between 4a and 4b, corresponding to faces slanted by 2 to 16 degrees from the GaAs (100) face in the direction <110>, on a substrate holder 3 made of molybdenum, and are stuck using a metallic element, In. The substrate is heated by a substrate heater 5 and molecular beams of a Zn molecular beam raw material 6, an Se molecular beam raw material 8 and a Cl molecular beam raw material 10 are respectively emitted toward the substrate from the raw materials 6, 8 and 10. Lastly, the growth time of a thin film is changed and the N-type Cl-doped ZnSe thin film is formed. Accordingly, it becomes possible to obtain a flat thin film having a high crystallinity. |
