| 摘要 |
<p>PURPOSE:To suppress both increase in occupation area and increase in size of the region where a bump electrode is arranged by a method wherein the upper area of a part of a plurality of bump electrodes is formed wider than the bottom area, the cross section in the direction along the circumference of a chip is squarely formed, and the upper side of the cross section in vertical direction is formed longer than the lower side. CONSTITUTION:An aluminum wiring 12 is formed on a semiconductor substrate 11, a plurality of aperture parts 13a, to be used for a bump electrode, are formed on the whole surface of an insulating protective film 13, a barrier metal 14 is formed on the inner surface and the upper edge part of the aperture parts 13a, and the whole surface is coated with an organic film 15. A groove-like recessed part 17 is formed on the surface of the organic film along a part of the circumference of an aperture part 16 for bump electrode. When the organic film 15 is contracted by conducting a heat treatment at about 130 deg.C for ten minutes or thereabout, the region having the area wider than the aperture part 16 is contracted more than the narrow region located between the aperture part 16 and the recessed part 17, the contraction is stopped by the recessed part 17, and the upper end part and its neighborhood of the aperture part is expanded toward the area where the recessed part is not formed.</p> |
