| 摘要 |
Desirably, a Schottky barrier semiconductor diode has low forward direction rising voltage and high inverse direction yield voltage. A semiconductor device is provided with a first metal producing a low Schottky barrier and a second metal producing a high Schottky barrier. The forward direction rising voltage is reduced on account of the first metal. The inverse direction yield voltage, which is decreased due to the lowered forward rising voltage, is compensated for upon linking of depletion regions generated by forming the PN junction under the first metal layer and not under the second metal layer. As a result, a high inverse yield voltage is realized.
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