| 摘要 |
PURPOSE:To make it possible to contrive fully ant increase in a luminance to a silicon carbide light-emitting diode element by a method wherein a P<-> silicon carbide layer having a layer thickness of a hole diffusion length or shorter is provided on an N-type silicon carbide layer, which is used as a luminous layer, by laminating and forming and a P<+> silicon carbide layer is provided on the P<-> silicon carbide layer by laminating and forming. CONSTITUTION:A luminous layer 2, which contains nitrogen which is used as donor impurities, is used as a luminous center and contains a small amount of Al which is used as acceptor impurities, is laminated on an N-type SiC single- crystal substrate 1. A low-carrier concentration P<-> SiC layer 3 is laminated and formed on an SiC single-crystal layer which is the layer 2. A high-carrier concentration P<+> SiC layer 4 is laminated and formed on the layer 3. A P-type side ohmic electrode 5 is formed on the layer 4 and at the same time, an N-type side ohmic electrode 6 is formed on one part of the lower surface of the substrate 1. Thereby, an increase in a luminance to a light-emitting diode element can be contrived. |
