| 摘要 |
<p>PURPOSE:To facilitate an alignment of a light-emitting element with a photodetector by a method wherein an insulating layer consisting of a transparent or semi-transparent material is formed on the semiconductor light-emitting element, the polycrystalline or amorphous semiconductor photodetector is formed on the insulating layer and light emitted when a current is injected in the light- emitting element reaches the photodetector. CONSTITUTION:An N-type GaP film 21 and a P-type GaP film 22 doped with Zn and O are grown on an N-type GaP substrate 20 by a liquid phase method. An N-type electrode 23 having an opening part 24 is formed on the rear of the substrate 20. An SiO2 film 25 is formed on the whole surface of the electrode 23 and a Cr film 26 provided with an opening part 27 is formed as an electrode of a photodiode. Si films 28 to 30, the electrode 26 and the film 25 are etched to form a step 31 for taking out the electrode 23 on the rear of the substrate 20 and the Si layers 28 to 30 are etched to form a step 32 for taking out the electrode 26 under the P-type Si layer 28. Lastly, an N-type electrode 33 and a P-type GaP electrode 34 of the photodiode are deposited and an optical coupler can be formed.</p> |
