| 摘要 |
PURPOSE:To provide a semiconductor memory device and the manufacturing method thereof, which can increase the capacity value of memory cells and are suitable for flattening. CONSTITUTION:A pair of memory cells MC1 and MC 2 are adjacent with a field oxide film 12 in-between and connected to the same bit line BL. Storage electrodes ST1 and ST2 are made to extend on the field oxide film 12 so as to hold a cell plate electrode SP in the up and down directions to each other. Thus, the facing area of the storage electrodes ST1 and ST2 becomes large. Therefore, the capacity value of the memory cells can be increased. |
