发明名称 Level shifter of driving circuit and operating method thereof
摘要 A level shifter applied in a driving circuit of a display is disclosed. The level shifter includes a first stage of level shifting unit and a second stage of level shifting unit and used to convert an input voltage signal with low voltage level into an output voltage signal with high voltage level. In one example, the total number of the transistors needed by the level shifter is much fewer than that of the prior art, and additional voltage sources are not needed to provide middle voltages. The manufacturing cost of the exemplary level shifter can be reduced and the signal level shifting efficiency of multi-power domain can be enhanced.
申请公布号 US9373275(B2) 申请公布日期 2016.06.21
申请号 US201414504141 申请日期 2014.10.01
申请人 Raydium Semiconductor Corporation 发明人 Chuang Kai-Lan;Wang Chen-Yu;Chen Chien-Ru
分类号 H03L5/00;G09G3/20;H03K3/356 主分类号 H03L5/00
代理机构 代理人
主权项 1. A level shifter, applied in a driving circuit of a display, for converting an input voltage signal with low voltage level into an output voltage signal with high voltage level, the level shifter comprising: a first stage of level shifting unit comprising a first transistor, a second transistor, a third transistor, a fourth transistor, a fifth transistor, a sixth transistor, a seventh transistor, and an eighth transistor, wherein the first transistor, the second transistor, the third transistor, and the fourth transistor are N-type MOSFETs; the fifth transistor, the sixth transistor, the seventh transistor, and the eighth transistor are P-type MOSFETs; the first transistor, the third transistor, the fifth transistor, and the seventh transistor are coupled in series between a ground terminal and an operational voltage; the second transistor, the fourth transistor, the sixth transistor, and the eighth transistor are coupled in series between the ground terminal and the operational voltage; gates of the first transistor and the second transistor are coupled to the input voltage signal; gates of the third transistor, the fourth transistor, the fifth transistor, the sixth transistor are coupled to a half operational voltage which is half of the operational voltage; a gate of the seventh transistor is coupled to a first node between the sixth transistor and the eighth transistor; a gate of the eighth transistor is coupled to a second node between the fifth transistor and the seventh transistor; a second stage of level shifting unit comprising a ninth transistor, a tenth transistor, an eleventh transistor, and a twelfth transistor, wherein the second stage of level shifting unit is coupled to the first stage of level shifting unit; the ninth transistor and the tenth transistor are N-type MOSFETs; the eleventh transistor and the twelfth transistor are P-type MOSFETs; the ninth transistor and the eleventh transistor are coupled in series between the half operational voltage and the operational voltage; the tenth transistor and the twelfth transistor are coupled in series between the half operational voltage and the operational voltage; a gate of the ninth transistor is coupled to a first output terminal between the tenth transistor and the twelfth transistor; a gate of the tenth transistor is coupled to a second output terminal between the ninth transistor and the eleventh transistor; a gate of the eleventh transistor is coupled to the first node; a gate of the twelfth transistor is coupled to the second node; the second stage of level shifting unit outputs the output voltage signal via the first output terminal and the second output terminal; and another second stage of level shifting unit comprising a thirteenth transistor, a fourteenth transistor, a fifteenth transistor, and a sixteenth transistor, wherein the another second stage of level shifting unit is coupled to the first stage of level shifting unit; the thirteenth transistor and the fourteenth transistor are N-type MOSFETs; the fifteenth transistor and the sixteenth transistor are P-type MOSFETs; the thirteenth transistor and the fifteenth transistor are coupled in series between the ground terminal and the half operational voltage; the fourteenth transistor and the sixteenth transistor are coupled in series between the ground terminal and the half operational voltage; a gate of the thirteenth transistor is coupled between the first transistor and the third transistor; a gate of the fourteenth transistor is coupled between the second transistor and the fourth transistor; a gate of the fifteenth transistor is coupled to a third output terminal between the fourteenth transistor and the sixteenth transistor; a gate of the sixteenth transistor is coupled to a fourth output terminal between the thirteenth transistor and the fifteenth transistor; a gate of the twelfth transistor is coupled to the second node; the another second stage of level shifting unit outputs another output voltage signal via the third output terminal and the fourth output terminal.
地址 Hsinchu County TW